? 2010 ixys all rights reserved 1 - 6 20100302b vmo 1600-02p ixys reserves the right to change limits, test conditions and dimensions. v dss = 200 v i d80 = 1600 a r ds(on) = 1.7 mw max. polarht tm module features ? polarht tm technology - low r dson - dv/dt ruggedness - fast intr insic reverse diode ? pac kage - low inductiv e current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliar y terminals possible - kelvin source ter minals for easy drive - isolated ceramic base plate applications ? converters with high power density for - main & aux. ac drives of electric vehicles - dc drives - power supplies mosfet symbol conditions maximum ratings v dss t vj = 25c to 150c 200 v v gs 20 v i d25 i d80 t c = 25c t c = 80c 1900 1600 a a i f25 i f80 t c = 25c (diode) t c = 80c (diode) 1900 1600 a a g d s n-channel enhancement mode d g ks s ks symbol conditions characteristic values (t vj = 25 c, unless otherwise specifed) min. typ. max. r dson v gs = 10 v; i d = 1600 a; t vj = 25c t vj = 125c 1.58 3.25 1.7 3.6 mw mw v gs(th) v ds = 20 v; i d = 5 ma 2.5 5 v i dss v ds = v dss ; v gs = 0 v; t vj = 25c t vj = 125c 5.0 0.5 ma ma i gss v gs = 20 v; v ds = 0 v 2 a q g q gs q gd v gs = 10 v; v ds = 0.5v dss ; i d = i d80 2900 600 1600 nc nc nc t d(on) t r t d(off) t f e on e off e rec inductive load v gs = 10 v; v ds = 100 v i d = 1600 a; r g = 1.8 ? t vj = 25c 320 1220 620 700 24 152 3.7 ns ns ns ns mj mj mj t d(on) t r t d(off) t f e on e off e rec inductive load v gs = 10 v; v ds = 100 v i d = 1600 a; r g = 1.8 ? t vj = 125c 340 1220 740 580 28 147 4.9 ns ns ns ns mj mj mj r thjc r thjh with heat transfer paste 0.037 0.03 0.056 k/w k/w p h a s e - o u t
? 2010 ixys all rights reserved 2 - 6 20100302b vmo 1600-02p ixys reserves the right to change limits, test conditions and dimensions. module symbol conditions maximum ratings t vj t stg -40...+150 -40...+125 c c v isol i isol < 1 ma; 50/60 hz 3600 v~ m d mounting torque (m6) teminal connection torque (m6) 2.25 - 2.75 4.5 - 5.5 nm nm symbol conditions characteristic values min. typ. max. weight 250 g source drain diode symbol conditions characteristic values min. typ. max. v sd i f = 1600 a; v gs = 0 v; t vj = 25c t vj = 125c 1.17 1.13 v v t rr q rr i rm v ds = 100 v; i f = 1600 a t vj = 25c dv f /dt = 1300 a/s 340 40 210 ns c a t rr q rr i rm v ds = 100 v; i f = 1600 a t vj = 125c dv f /dt = 1300 a/s 380 56 250 ns c a ordering part name marking on product delivering mode base qty code key standard vmo 1600-02p vmo 1600-02p box 2 504288 p h a s e - o u t
? 2010 ixys all rights reserved 3 - 6 20100302b vmo 1600-02p ixys reserves the right to change limits, test conditions and dimensions. optional accessories for modules keyed twin plugs (ul758, style 1385, csa class 5851, guide 460-1-1) ? type zy180l with wire length 350 mm for pins 4 (gate , yellow wire) and 5 (kelvin source , red wire) dimensions in mm (1 mm = 0.0394") p h a s e - o u t
? 2010 ixys all rights reserved 4 - 6 20100302b vmo 1600-02p ixys reserves the right to change limits, test conditions and dimensions. v ds [v] 0 1 2 3 4 5 0 200 400 600 800 1000 1200 1400 1600 v ds [v] 0 1 2 3 4 5 0 200 400 600 800 1000 1200 1400 1600 t j [c] -50 -25 0 25 50 75 100 125 150 175 r ds(on) [m ] 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 v gs [v] 0 2 4 6 8 10 i d [a] 0 200 400 600 800 1000 1200 1400 1600 6 v 7 v t j = 125c 5 v t j = 25c 7 v 6 v 5 v i d [a] 0 200 400 600 800 1000 1200 1400 1600 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5 v 6 v i d = 1600 a t j = 125c 7 v 8 v 9 v 10 v r ds(on) normal. v gs = 10 v 9 v 8 v t j = 25c t j = 25c r ds(on) r ds(on) normalized q g [nc] 0 500 1000 1500 2000 2500 3000 3500 0 2 4 6 8 10 12 v gs [v] i d = 1600 a v ds = 100 v v gs = 10 v 9 v 8 v i d [a] i d [a] r ds(on) normal. fig. 2 typical gate charge characteristic fig. 3 typical output characteristic fig. 4 typical output characteristic fig. 5 typ . drain source on-state resistance r ds(on) versus junction temper ature t vj fig. 6 typ. drain source on-stateresistance r ds(on) versus i d fig. 1 typical transfer characteristic p h a s e - o u t
? 2010 ixys all rights reserved 5 - 6 20100302b vmo 1600-02p ixys reserves the right to change limits, test conditions and dimensions. t d(on) t r e rec(off) 0 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 25 30 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 1400 1600 1800 0 50 100 150 0 200 400 600 800 1000 1200 0 2 4 6 8 10 0 20 40 60 80 100 0 400 800 1200 1600 2000 0 2 4 6 8 10 0 50 100 150 200 250 300 0 1000 2000 3000 4000 5000 6000 e on e on , e rec [mj] i d [a] i d [a] t [ns] e off t f t d(off) t [ns] t [ns] t d(on) t r r g [ ] e off t d(off) t f e off [mj] e on , e rec [mj] e on e rec(off) e off [mj] r g [ ] v ds = 100 v v gs = 0/10 v i d = 1600 a t j = 125c v ds = 100 v v gs = 0/10 v i d = 1600 a t j = 125c 400 600 800 1000 1200 0 50 100 150 200 250 300 -di f /dt [a/s] 400 600 800 1000 1200 t rr [ns] 0 100 200 300 400 500 v r = 100 v i f = 1600 a t vj = 125c -di f /dt [a/s] i rm [a] v r = 100 v i f = 1600 a t vj = 125c v ds = 100 v v gs = 0/10 v r g = 1.8 t j = 125c v ds = 100 v v gs = 0/10 v r g = 1.8 t j = 125c t [ns] fig.7 typ. turn-on energy & switching times vs. drain source current, inductiv e switching fig. 8 typ . turn-off energy & switching times vs. drain source current, inductiv e switching fig. 9 typ . turn-on energy & switching times vs. gate resistor, inductive switching fig. 10 typ . turn-off energy & switching times vs. gate resistor, inductive switching fig.11 typ . reverse recovery time t rr of the body diode versus di/dt fig. 12 typ . reverse recovery current i rm of the body diode versus di/dt p h a s e - o u t
? 2010 ixys all rights reserved 6 - 6 20100302b vmo 1600-02p ixys reserves the right to change limits, test conditions and dimensions. v sd [v] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i f [a] 0 200 400 600 800 1000 1200 1400 1600 400 600 800 1000 1200 q rr [c] 10 20 30 40 50 60 -di f /dt [a/s] v r = 100 v t vj = 125c t j = 25c t j = 125c thermal response [k/w] t [ms] 1 10 100 1000 10000 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 fig. 13 typical reverse recovery charge q rr of the body diode vers u s di/dt fig. 14 source drain current i f (body diode) vs. typical source drain voltage v sd fig. 15 defnition of switching times fig. 16 typ. thermal impedance junction to heatsink z thjh with heat transfer paste ?lv i x6 ?l i x6 ?lv a - ?lv a - ?l a - i x6 i -6 a - ?l a - m m m . m ) m ,3boc m ,3b))c p h a s e - o u t
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